View HMC459_235013.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MICROWAVE CORPORATION
v00.0204
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
Features
+25 dBm P1dB Output Power Gain: 17 dB +31.5 dBm Output IP3 Supply Voltage: +8.0V @ 290 mA 50 Ohm Matched Input/Output 3.12 mm x 1.63 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC459 wideband driver is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation
Functional Diagram
General Description
The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good making the HMC459 ideal for EW, ECM and radar driver amplifier applications. The HMC459 amplifier I/O's are internally matched to 50 Ohms facilitating easy integration into MultiChip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, TA = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) 21 16.5 Min. Typ. DC - 2.0 18.5 0.5 0.02 22 27 24 26.5 40 4.0 290 20.5 0.03 15 Max. Min. Typ. DC - 6.0 18 0.75 0.02 19.5 15 24.5 26.5 34 4.0 290 22 0.03 14 Max. Min. Typ. DC - 10.0 17 0.75 0.03 19 14 25 26.5 31.5 3.0 290 14 0.04 0.035 10 14 17 21 26 6.5 290 0.045 9 Max. Min Typ DC - 18.0 12 Max Units GHz dB dB dB/ C dB dB dBm dBm dBm dB mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
1 - 76
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature
25 20 15 RESPONSE (dB) 10 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) GAIN (dB) 5
S21 S11 S22
17 - 25 GHz
+25 C +85 C -55 C
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz)
+25 C +85 C -55 C
Output Return Loss vs. Temperature
0 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 -35 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz)
+25 C +85 C -55 C
Low Frequency Gain & Return Loss
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 0.00001
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0
+25 C +85 C -55 C
RESPONSE (dB)
S21 S11 S22
0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 77
AMPLIFIERS - CHIP
22 21 20 19 18 17 16 15 14 13 12 11 10 9 8
1
v00.0204
MICROWAVE CORPORATION
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
1
AMPLIFIERS - CHIP
GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature
30 28 26 P1dB (dBm) Psat (dBm) 24 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz)
+25 C +85 C -55 C
17 - 25 GHz
30 28 26 24 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz)
+25 C +85 C -55 C
Output IP3 vs. Temperature
44 42 40 38 OIP3 (dBm) 36 34 32 30 28 26 24 22 20 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz)
+25 C +85 C -55 C
Gain, Power & OIP3 vs. Supply Voltage @ 5 GHz, Fixed Vgg
GAIN (dB), P1dB (dBm), PSAT (dBm), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 18 16 14 7.5 8 Vdd SUPPLY VOLTAGE (Vdc) 8.5
GAIN (dB) P1dB (dBm) PSAT (dBm) OIP3 (dBm)
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz)
+25 C +85 C -55 C
1 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFin)(Vdd = +8.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 51.5 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +9.0 Vdc -2.0 to 0 Vdc (Vdd -8.0) Vdc to Vdd +23 dBm 175 C 4.64 W 19.4 C/W -65 to +150 C -55 to +85 C
Typical Supply Current vs. Vdd
Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 292 290 288
1
AMPLIFIERS - CHIP
1 - 79
Outline Drawing
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pad Number Function Description Interface Schematic
1
RFIN
This pad is AC coupled and matched to 50 Ohms from DC - 20.0 GHz
2
Vgg2
Gate Control 2 for amplifier. +3V should be applied to Vgg2 for nominal operation. Vgg2 may be adjusted between 0 to +5V to temperature compensate gain.
4
RFOUT & Vdd
RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein.
5
Vgg1
Gate Control 1 for amplifier. Adjust between -2 to 0V to achieve Idd= 290 mA.
3
ACG1
Low frequency termination. Attach bypass capacitor per application circuit here in.
6
ACG2
Low frequency termination. Attach bypass capacitor per application circuit here in.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
1 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
Assembly Diagram
1
AMPLIFIERS - CHIP
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 81
v00.0204
MICROWAVE CORPORATION
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
1
AMPLIFIERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-tosubstrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
1 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC459
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18.0 GHz
Notes:
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 83

▲Up To Search▲

Price & Availability of HMC459

	To Download HMC459 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .